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Tailoring Anisotropic Wetting Properties on Submicrometer-Scale Periodic Grooved Surfaces
The use of simple plasma treatments and polymer deposition to tailor the anisotropic wetting properties of one-dimensional (1D) submicrometer-scale grooved surfaces, fabricated using interferometric lithography in photoresist polymer films, is reported. Strongly anisotropic wetting phenomena are obs...
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Published in: | Langmuir 2010-02, Vol.26 (4), p.2700-2706 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The use of simple plasma treatments and polymer deposition to tailor the anisotropic wetting properties of one-dimensional (1D) submicrometer-scale grooved surfaces, fabricated using interferometric lithography in photoresist polymer films, is reported. Strongly anisotropic wetting phenomena are observed for as-prepared 1D grooved surfaces for both positive and negative photoresists. Low-pressure plasma treatments with different gas compositions (e.g., CHF3, CF4, O2) are employed to tailor the anisotropic wetting properties from strongly anisotropic and hydrophobic to hydrophobic with very high contact angle and superhydrophilic with a smaller degree of wetting anisotropy and without changing the structural anisotropy. The change of the surface wetting properties for these 1D patterned surfaces is attributed to a change in surface chemical composition, monitored using XPS. In addition, the initial anisotropic wetting properties on 1D patterned samples could be modified by coating plasma treated samples with a thin layer of polymer. We also demonstrated that the wetting properties of 1D grooved surfaces in a Si substrate could be tuned with similar plasma treatments. The ability to tailor anisotropic wetting on 1D patterned surfaces will find many applications in microfluidic devices, lab-on-a-chip systems, microreactors, and self-cleaning surfaces. |
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ISSN: | 0743-7463 1520-5827 |
DOI: | 10.1021/la904505n |