Giant Persistent Photoconductivity in Rough Silicon Nanomembranes

• Published in: Nano letters 2009-10, Vol.9 (10), p.3453-3459
• Main Authors: Feng, Ping, Mönch, Ingolf, Harazim, Stefan, Huang, Gaoshan, Mei, Yongfeng, Schmidt, Oliver G
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals; Exact sciences and technology; Materials science; Nanocrystalline materials; Nanoscale materials and structures: fabrication and characterization; Physics
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/nl9016557

This paper reports the observation of giant persistent photoconductivity from rough Si nanomembranes. When exposed to light, the current in p-type Si nanomembranes is enhanced by roughly 3 orders of magnitude in comparison with that in the dark and can persist for days at a high conductive state after the light is switched off. An applied gate voltage can tune the persistent photocurrent and accelerate the response to light. By analyzing the band structure of the devices and the surfaces through various coatings, we attribute the observed effect to hole-localized regions in Si nanomembranes due to the rough surfaces, where light can activate the confined holes.