Direct measurements of fractional quantum Hall effect gaps

We measure the chemical potential jump across the fractional gap in the low-temperature limit in the two-dimensional electron system of GaAs/AlGaAs single heterojunctions. In the fully spin-polarized regime, the gap for filling factor nu=1/3 increases linearly with the magnetic field and is coincide...

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Bibliographic Details
Published in:Physical review letters 2007-08, Vol.99 (8), p.086802-086802, Article 086802
Main Authors: Khrapai, V S, Shashkin, A A, Trokina, M G, Dolgopolov, V T, Pellegrini, V, Beltram, F, Biasiol, G, Sorba, L
Format: Article
Language:English
Subjects:
Cold Temperature
Electrons
Magnetic Fields
Quantum Theory
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Summary:We measure the chemical potential jump across the fractional gap in the low-temperature limit in the two-dimensional electron system of GaAs/AlGaAs single heterojunctions. In the fully spin-polarized regime, the gap for filling factor nu=1/3 increases linearly with the magnetic field and is coincident with that for nu=2/3, reflecting the electron-hole symmetry in the spin-split Landau level. In low magnetic fields, at the ground-state spin transition for nu=2/3, a correlated behavior of the nu=1/3 and nu=2/3 gaps is observed.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.99.086802