The phonon contribution to high-resolution electron microscope images

The amount of phonon scattering as a function of specimen thickness is determined for a clean silicon sample, free from amorphous surface layers, by measuring the diffuse scattering in energy-filtered convergent-beam diffraction patterns. It is found that for a 25 nm thick sample, only 7.5% of the i...

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Bibliographic Details
Published in:Ultramicroscopy 2003-09, Vol.96 (3), p.361-365
Main Authors: Boothroyd, C.B., Yeadon, M.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Convergent-beam electron diffraction
Convergent-beam electron diffraction, selected-area electron diffraction, nanodiffraction
Diffuse scattering
Electron diffraction and scattering
Electron, ion, and scanning probe microscopy
Electron, positron and ion microscopes, electron diffractometers and related techniques
Energy filtering
Exact sciences and technology
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Lattice images
Phonon scattering
Physics
Quantitative HREM
Structure of solids and liquids
crystallography
Transmission, reflection and scanning electron microscopy(including ebic)
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Summary:The amount of phonon scattering as a function of specimen thickness is determined for a clean silicon sample, free from amorphous surface layers, by measuring the diffuse scattering in energy-filtered convergent-beam diffraction patterns. It is found that for a 25 nm thick sample, only 7.5% of the intensity scattered to less than 18 nm −1 is phonon scattered. This means that in a typical high-resolution sample most of the diffuse scattering is caused by surface amorphous layers rather than phonon scattering.
ISSN:0304-3991
1879-2723
DOI:10.1016/S0304-3991(03)00101-3