Spin-independent origin of the strongly enhanced effective mass in a dilute 2D electron system

We accurately measure the effective mass in a dilute two-dimensional electron system in silicon by analyzing the temperature dependence of the Shubnikov-de Haas oscillations in the low-temperature limit. A sharp increase of the effective mass with decreasing electron density is observed. We find tha...

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Bibliographic Details
Published in:Physical review letters 2003-07, Vol.91 (4), p.046403-046403, Article 046403
Main Authors: Shashkin, A A, Rahimi, Maryam, Anissimova, S, Kravchenko, S V, Dolgopolov, V T, Klapwijk, T M
Format: Article
Language:English
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Summary:We accurately measure the effective mass in a dilute two-dimensional electron system in silicon by analyzing the temperature dependence of the Shubnikov-de Haas oscillations in the low-temperature limit. A sharp increase of the effective mass with decreasing electron density is observed. We find that the enhanced effective mass is independent of the degree of spin polarization, which points to a spin-independent origin of the mass enhancement and is in contradiction with existing theories.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.91.046403