Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes

Over 350 4H-SiC Schottky barrier diodes (SBDs) of varying size are characterized using current–voltage ( I – V ) measurements, with some also measured as a function of temperature. Devices display either a characteristic single-barrier height or atypical dual-barrier heights. Device yields are shown...

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Bibliographic Details
Published in:Journal of electronic materials 2009-04, Vol.38 (4), p.574-580
Main Authors: Bolen, M. L., Capano, M. A.
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Crystal defects
Diodes
Electronics and Microelectronics
Instrumentation
Materials Science
Optical and Electronic Materials
Silicon carbide
Solid State Physics
Threading dislocations
Titanium
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Summary:Over 350 4H-SiC Schottky barrier diodes (SBDs) of varying size are characterized using current–voltage ( I – V ) measurements, with some also measured as a function of temperature. Devices display either a characteristic single-barrier height or atypical dual-barrier heights. Device yields are shown to decrease as device area increases. Molten KOH etching is used to highlight defects for analysis by optical microscopy and atomic force microscopy. The I – V characteristics are compared against the defect density. A positive correlation between effective barrier height and effective electrically active area of the SBDs is found. No correlation is found between threading dislocations and ideality factor or barrier height.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-008-0647-5