Control of Thickness and Orientation of Solution-Grown Silicon Nanowires

Bulk quantities of defect-free silicon (Si) nanowires with nearly uniform diameters ranging from 40 to 50 angstroms were grown to a length of several micrometers with a supercritical fluid solution-phase approach. Alkanethiol-coated gold nanocrystals (25 angstroms in diameter) were used as uniform s...

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Bibliographic Details
Published in:Science (American Association for the Advancement of Science) 2000-02, Vol.287 (5457), p.1471-1473
Main Authors: Holmes, Justin D., Johnston, Keith P., Doty, R. Christopher, Korgel, Brian A.
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Crystal lattices
Economic bubbles
Exact sciences and technology
Growth from solutions
Hexanes
Inhalants
Liquids
Materials science
Methods of crystal growth
physics of crystal growth
Nanocrystals
Nanoscale materials and structures: fabrication and characterization
Nanotechnology
Nanowires
Optical properties
Physics
Quantum theory
Self assembly
Silicon
Spectroscopy
Water pressure
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Summary:Bulk quantities of defect-free silicon (Si) nanowires with nearly uniform diameters ranging from 40 to 50 angstroms were grown to a length of several micrometers with a supercritical fluid solution-phase approach. Alkanethiol-coated gold nanocrystals (25 angstroms in diameter) were used as uniform seeds to direct one-dimensional Si crystallization in a solvent heated and pressurized above its critical point. The orientation of the Si nanowires produced with this method could be controlled with reaction pressure. Visible photoluminescence due to quantum confinement effects was observed, as were discrete optical transitions in the ultraviolet-visible absorbance spectra.
ISSN:0036-8075
1095-9203
DOI:10.1126/science.287.5457.1471