Germanium-Rich SiGe Nanowires Formed Through Oxidation of Patterned SiGe FINs on Insulator

• Published in: Journal of electronic materials 2009-03, Vol.38 (3), p.443-448
• Main Authors: Balakumar, S., Buddharaju, K. D., Tan, B., Rustagi, S. C., Singh, N., Kumar, R., Lo, G. Q., Tripathy, S., Kwong, D. L.
• Format: Article
• Language: English
• Subjects: Characterization and Evaluation of Materials; Chemical synthesis methods; Chemistry and Materials Science; Condensation; Cross-disciplinary physics: materials science; rheology; Electronics and Microelectronics; Exact sciences and technology; Instrumentation; Materials Science; Methods of nanofabrication; Nanoscale materials and structures: fabrication and characterization; Nanowires; Optical and Electronic Materials; Oxidation; Physics; Quantum wires; Silicon; Solid State Physics; Spectrum analysis
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-008-0621-2

In this study, the authors report on the fabrication of Ge-rich SiGe nanowires (SGNWs) by oxidation of SiGe fins on insulator. Nanowires of different shapes and size are obtained by varying the initial fin shape, Ge content, oxidation process temperature, and oxidation time. Transmission electron microscopy observations revealed nanowires with rectangular, square, elliptical, circular, octagonal, and hexagonal cross-sections, with different Ge content. The elliptical, octagonal, and hexagonal facets are unique shapes formed with low-index faces belonging to (110) groups. These possess very high Ge content up to 95%, and were obtained in the samples oxidized from 850°C to 875°C. In␣addition, the in-plane strain in the fabricated SGNWs is evaluated using micro-Raman spectroscopy. The possible mechanism behind the formation and transformation of different nanowire shapes is discussed.