High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond

Room-temperature drift mobilities of 4500 square centimeters per volt second for electrons and 3800 square centimeters per volt second for holes have been measured in high-purity single-crystal diamond grown using a chemical vapor deposition process. The low-field drift mobility values were determin...

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Bibliographic Details
Published in:Science (American Association for the Advancement of Science) 2002-09, Vol.297 (5587), p.1670-1672
Main Authors: Isberg, Jan, Hammersberg, Johan, Johansson, Erik, Wikström, Tobias, Twitchen, Daniel J., Whitehead, Andrew J., Coe, Steven E., Scarsbrook, Geoffrey A.
Format: Article
Language:English
Subjects:
Boron
Carrier lifetime
Carrier mobility
Charge carriers
Climate
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Diamond crystals
Diamonds
Diodes
Electric current
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in condensed matter
Electronic transport in interface structures
Electronics
Electrons
Exact sciences and technology
Experiments
Junction diodes
Low-field transport and mobility
piezoresistance
Materials
Mobility
Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
Physics
Research and Development
Sampling bias
Scientific Concepts
Semiconductors
Synthetic products
Temperature
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Description
Summary:Room-temperature drift mobilities of 4500 square centimeters per volt second for electrons and 3800 square centimeters per volt second for holes have been measured in high-purity single-crystal diamond grown using a chemical vapor deposition process. The low-field drift mobility values were determined by using the time-of-flight technique on thick, intrinsic, freestanding diamond plates and were verified by current-voltage measurements on p-i junction diodes. The improvement of the electronic properties of single-crystal diamond and the reproducibility of those properties are encouraging for research on, and development of, high-performance diamond electronics.
ISSN:0036-8075
1095-9203
DOI:10.1126/science.1074374