Modeling ion implantation of HgCdTe

• Published in: Journal of electronic materials 1996-08, Vol.25 (8), p.1336-1340
• Main Authors: Robinson, H G, Mao, D H, Williams, B L, Holander-Gleixner, S
• Format: Article
• Language: English
• Subjects: Annealing; Electrical engineering; Ion implantation; Mercury cadmium telluride
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/BF02655029

Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MCT). The junction is formed by Hg interstitials from the implant damage region diffusing into the MCT and annihilating Hg vacancies. The resultant doping profile is n^sup +^/n^sup -^/p, where the n^sup +^ region is near the surface and roughly coincides with the implant damage, the n^sup -^ region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MCT by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background. [PUBLICATION ABSTRACT]