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Metalorganic chemical vapor deposition of non-GST chalcogenide materials for phase change memory applications

The feasibility of InSbTe (IST) chalcogenide new materials by metalorganic chemical vapor deposition (MOCVD) was demonstrated for PRAM applications. IST-MOCVD at a low temperature of 250 'C resulted in a favorable conformal deposition in the trench structure with a high aspect ratio. The IST fi...

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Bibliographic Details
Published in:Journal of materials chemistry 2010-01, Vol.20 (9), p.1751-1754
Main Authors: Ahn, Jun-Ku, Park, Kyoung-Woo, Hur, Sung-Gi, Seong, Nak-Jin, Kim, Chung-Soo, Lee, Jeong-Yong, Yoon, Soon-Gil
Format: Article
Language:English
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Summary:The feasibility of InSbTe (IST) chalcogenide new materials by metalorganic chemical vapor deposition (MOCVD) was demonstrated for PRAM applications. IST-MOCVD at a low temperature of 250 'C resulted in a favorable conformal deposition in the trench structure with a high aspect ratio. The IST films grown at 250 'C showed the highest resistance of approximately 10(8) W/sq, suggesting the amorphous phase of IST and the films grown at 300 'C include various crystalline phases of IST, In-Sb, and In-Te. MOCVD-IST films exhibited a step-coverage of about 95% in the trench structure with a 5: 1 aspect ratio (a height of 500 nm and a diameter of 100 nm) and also showed reliable rilling of the trench under appropriate deposition conditions. Phase switching between amorphous and crystalline states in the IST films grown on a trench structure at a high-aspect ratio (3.5: 1) was demonstrated showing functional characteristics for applications in memory devices. The IST-based chalcogenide films used included various crystallized phases of In-Sb-Te, In-Sb and In-Te, which proved to be favorable for multilevel data storage.
ISSN:0959-9428
1364-5501
DOI:10.1039/b922398c