Influence of dislocations in the GaN layer on the electrical properties of an AlGaN/GaN heterostructure

This paper reports on a comparative study of the spatial distributions of the electrical, optical, and structural properties in an AlGaN/GaN heterostructure. Edge dislocation density in the GaN template layer is shown to decrease in the regions of the wafer where the heterostructure sheet resistance...

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Bibliographic Details
Published in:Chinese physics B 2009-11, Vol.18 (11), p.4970-4975
Main Authors: Zhi-Yuan, Gao, Yue, Hao, Jin-Cheng, Zhang, Pei-Xian, Li, Wen-Ping, Gu
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Compressive properties
Density
Dislocations
Edge dislocations
Electrical properties
Electrical resistivity
Electron gas
Gallium nitrides
Heterostructures
Photoluminescence
Piezoelectricity
Polarization
Properties
Spatial distribution
Strain
Wafers
Wavelengths
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Summary:This paper reports on a comparative study of the spatial distributions of the electrical, optical, and structural properties in an AlGaN/GaN heterostructure. Edge dislocation density in the GaN template layer is shown to decrease in the regions of the wafer where the heterostructure sheet resistance increases and the GaN photoluminescence band-edge energy peak shifts to a high wavelength. This phenomenon is found to be attributed to the local compressive strain surrounding edge dislocation, which will generate a local piezoelectric polarization field in the GaN layer in the opposite direction to the piezoelectric polarization field in the AlGaN layer and thus help to increase the two-dimensional electron gas concentration.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/18/11/059