Insights into single semiconductor nanowire heterostructures using time-resolved photoluminescence

We review a number of time-resolved photoluminescence experiments which have provided new understanding of the physical properties of single nanowires and single semiconductor nanowire heterostructures. Specifically, TRPL spectroscopy has been used to understand more fully non-radiative surface and...

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Bibliographic Details
Published in:Semiconductor science and technology 2010-02, Vol.25 (2), p.024010-024010 (13)
Main Authors: Smith, Leigh M, Jackson, Howard E, Yarrison-Rice, Jan M, Jagadish, Chennupati
Format: Article
Language:English
Subjects:
Alignment
Band spectra
Cadmium sulfides
Compact disks
Defects
Gallium arsenide
Gallium arsenides
Heterostructures
Indium phosphides
Nanocomposites
Nanomaterials
Nanowires
Photoluminescence
Physical properties
Semiconductors
Spectroscopy
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Summary:We review a number of time-resolved photoluminescence experiments which have provided new understanding of the physical properties of single nanowires and single semiconductor nanowire heterostructures. Specifically, TRPL spectroscopy has been used to understand more fully non-radiative surface and bulk defects, radiative defects in CdS, InP and GaAs nanowires, core-shell effects, polytypism in InP nanowires, many body effects in GaAs and InP nanowires, and type-II band alignments in ZB/WZ mixed phase nanowires.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/25/2/024010