Photoresists for 193-nm lithography

Allen et al discuss the origin of resist technology for 193-nm litography and the current status of 193-nm photoresists, focusing on single-layer resist materials.

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Bibliographic Details
Published in:IBM journal of research and development 1997-01, Vol.41 (1-2), p.95-104
Main Authors: Allen, Robert D, Wallraff, Gregory M, Hofer, Donald C, Kunz, Roderick R
Format: Article
Language:English
Subjects:
Chemical reactions
CMOS
Manufacturing
Microelectronics
Microprocessors
Offset printing
Optical properties
Photochemistry
R&D
Research & development
Semiconductors
Technology
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Description
Summary:Allen et al discuss the origin of resist technology for 193-nm litography and the current status of 193-nm photoresists, focusing on single-layer resist materials.
ISSN:0018-8646
0018-8646
2151-8556
DOI:10.1147/rd.411.0095