Red-Emitting Semiconductor Quantum Dot Lasers

Visible-stimulated emission in a semiconductor quantum dot (QD) laser structure has been demonstrated. Red-emitting, self-assembled QDs of highly strained InAlAs have been grown by molecular beam epitaxy on a GaAs substrate. Carriers injected electrically from the doped regions of a separate confine...

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Bibliographic Details
Published in:Science (American Association for the Advancement of Science) 1996-11, Vol.274 (5291), p.1350-1353
Main Authors: Fafard, S., Hinzer, K., Raymond, S., Dion, M., McCaffrey, J., Feng, Y., Charbonneau, S.
Format: Article
Language:English
Subjects:
Electric current
Electrons
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Innovations
Laser power
Lasers
Lasing
Optics
Physics
Power efficiency
Quantum theory
Semiconductor lasers
Semiconductor lasers
laser diodes
Semiconductors
Stimulated emission
Threshold currents
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Description
Summary:Visible-stimulated emission in a semiconductor quantum dot (QD) laser structure has been demonstrated. Red-emitting, self-assembled QDs of highly strained InAlAs have been grown by molecular beam epitaxy on a GaAs substrate. Carriers injected electrically from the doped regions of a separate confinement heterostructure thermalized efficiently into the zero-dimensional QD states, and stimulated emission at ∼707 nanometers was observed at 77 kelvin with a threshold current of 175 milliamperes for a 60-micrometer by 400-micrometer broad area laser. An external efficiency of ∼8.5 percent at low temperature and a peak power greater than 200 milliwatts demonstrate the good size distribution and high gain in these high-quality QDs.
ISSN:0036-8075
1095-9203
DOI:10.1126/science.274.5291.1350