Study on the degradation of NMOSFETs with ultra-thin gate oxide under channel hot electron stress at high temperature

This paper studies the degradation of device parameters and that of stress induced leakage current （SILC） of thin tunnel gate oxide under channel hot electron （CHE） stress at high temperature by using n-channel metal oxide semiconductor field effect transistors （NMOSFETs） with 1.4-nm gate oxides. Th...

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Bibliographic Details
Published in:Chinese physics B 2009-12, Vol.18 (12), p.5479-5484
Main Author: 胡仕刚 郝跃 马晓华 曹艳荣 陈炽 吴笑峰
Format: Article
Language:English
Subjects:
Channels
Correlation
Degradation
Devices
Field effect transistors
Gates
Hot electrons
Leakage current
Mathematical models
Metal oxide semiconductors
Origins
Oxides
Semiconductor devices
Stresses
Time dependence
Tunnels (transportation)
器件参数
应力诱导
热电子
超薄栅氧化层
金属氧化物半导体场效应晶体管
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Summary:This paper studies the degradation of device parameters and that of stress induced leakage current （SILC） of thin tunnel gate oxide under channel hot electron （CHE） stress at high temperature by using n-channel metal oxide semiconductor field effect transistors （NMOSFETs） with 1.4-nm gate oxides. The degradation of device parameters under CHE stress exhibits saturating time dependence at high temperature. The emphasis of this paper is on SILC of an ultra-thin-gate-oxide under CHE stress at high temperature. Based on the experimental results, it is found that there is a linear correlation between SILC degradation and Vh degradation in NMOSFETs during CHE stress. A model of the combined effect of oxide trapped negative charges and interface traps is developed to explain the origin of SILC during CHE stress.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/18/12/058