Isolation of an Intrinsic Precursor to Molecular Chemisorption

Over the past 70 years, numerous gas-surface adsorption studies have indicated the existence of a weakly bound, mobile intermediate that is a precursor to chemical bond formation. The direct observation and characterization of such a species are presented. Precursor and chemisorbed benzene on a sili...

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Bibliographic Details
Published in:Science (American Association for the Advancement of Science) 1998-01, Vol.279 (5350), p.542-544
Main Authors: Brown, David E., Moffatt, Douglas J., Wolkow, Robert A.
Format: Article
Language:English
Subjects:
Absorption and adsorption
Adatoms
Adsorption
Atoms
Chemical bonding
Chemisorption
Chemistry
Climate
Desorption
Energy
Exact sciences and technology
Gas absorption
Gas adsorption
Gases
General and physical chemistry
Geometric planes
Laboratory Equipment
Literary Devices
Molecules
Observation
Room temperature
Silicon
Solid-gas interface
Spectroscopy
Surface physical chemistry
Topography
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Summary:Over the past 70 years, numerous gas-surface adsorption studies have indicated the existence of a weakly bound, mobile intermediate that is a precursor to chemical bond formation. The direct observation and characterization of such a species are presented. Precursor and chemisorbed benzene on a silicon surface were clearly distinguished with the use of a tunable-temperature scanning tunneling microscope. Precursor decay to chemisorption was observed, allowing the salient features of the potential energy surface to be determined.
ISSN:0036-8075
1095-9203
DOI:10.1126/science.279.5350.542