Synthesis, Structure, and Properties of Boron- and Nitrogen-Doped Graphene

Boron‐ and nitrogen‐doped graphenes are are prepared by the arc discharge between carbon electrodes or by the transformation of nanodiamond under appropriate atmospheres. Using a combination of experiment and theories based on first principles, systematic changes in the carrier‐concentration and ele...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2009-12, Vol.21 (46), p.4726-4730
Main Authors: Panchakarla, L. S., Subrahmanyam, K. S., Saha, S. K., Govindaraj, Achutharao, Krishnamurthy, H. R., Waghmare, U. V., Rao, C. N. R.
Format: Article
Language:English
Subjects:
doping
grapheme
structure-property relationships
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Summary:Boron‐ and nitrogen‐doped graphenes are are prepared by the arc discharge between carbon electrodes or by the transformation of nanodiamond under appropriate atmospheres. Using a combination of experiment and theories based on first principles, systematic changes in the carrier‐concentration and electronic structure of the doped graphenes are demonstrated. Stiffening of the G‐band mode and intensification of the defect‐related D‐band in the Raman spectra are also observed.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200901285