Properties of CuInS sub(2) thin films grown by a two-step process without H sub(2)S

CuInS sub(2) thin films were prepared by sulfurization of sequentially deposited Cu/In stacks with elemental sulfur. Precursors as well as reacted films are characterized by scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX) and X-ray diffraction (XRD). Excess copper is requi...

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Bibliographic Details
Published in:Solar energy materials and solar cells 1997-12, Vol.49 (1-4), p.349-356
Main Authors: Klenk, R, Blieske, U, Dieterle, V, Ellmer, K, Fiechter, S, Hengel, I, Jaeger-Waldau, A, Kampschulte, T, Kaufmann, Ch, Klaer, J, Lux-Steiner, M Ch, Braunger, D, Hariskos, D, Ruckh, M, Schock, H W
Format: Article
Language:English
Subjects:
Chemical operations
Deposition
Phase separation
Scanning electron microscopy
Semiconductor growth
Stoichiometry
Sulfur
Thin films
X ray analysis
X ray diffraction analysis
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Summary:CuInS sub(2) thin films were prepared by sulfurization of sequentially deposited Cu/In stacks with elemental sulfur. Precursors as well as reacted films are characterized by scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX) and X-ray diffraction (XRD). Excess copper is required for optimum properties and leads to a CuS secondary phase segregated at the surface. Stoichiometry is regained by etching after which heterojunctions are formed by deposition of a CdS/ZnO window layer. An active area efficiency of 10.4% has been achieved.
ISSN:0927-0248