In-situ characterization of thin films by the focused ion beam

In this article, we report silicon-based multilayered nanometer-size wires for vertical metal oxide semiconductor field effect transistor (MOSFET) and the ohmic contact of gallium nitride (GaN) field effect transistor (FET) were milled to produce trenches with a micron-scale rectangular area for a s...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Surfaces, and Films, 2000-07, Vol.18 (4), p.1701-1703
Main Authors: Choi, S. H., Li, R., Pak, M., Wang, K. L., Leung, M. S., Stupian, G. W., Presser, N.
Format: Article
Language:English
Subjects:
Computer simulation
Ion beams
Monte Carlo methods
Morphology
MOSFET devices
Multilayers
Scanning electron microscopy
Semiconducting gallium compounds
Semiconducting silicon
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Summary:In this article, we report silicon-based multilayered nanometer-size wires for vertical metal oxide semiconductor field effect transistor (MOSFET) and the ohmic contact of gallium nitride (GaN) field effect transistor (FET) were milled to produce trenches with a micron-scale rectangular area for a subsequent inspection by the field emission scanning electron microscope (FESEM). The cross-sectioning view by the FESEM enabled the investigation of individual film thickness and morphology as well as a depth profiling of elements by a subsequent Auger analysis. Monte Carlo simulation was done to estimate the penetration range of gallium ions into silicon and GaN at high energy.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.582410