HfO sub(2)-SiO sub(2) interface in PVD coatings

The interface between HfO sub(2) and SiO sub(2) in electron beam evaporated coatings were analyzed using multiple infrared reflection (MIR) technique and X-ray photoelectron spectroscopy. The coatings were deposited on germanium substrates using ion beam sputtering and electron beam evaporation tech...

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2001-01, Vol.19 (5), p.2267-2271
Main Authors: Cosnier, V, Olivier, M, Theret, G, Andre, B
Format: Article
Language:English
Subjects:
Chemical bonds
Hafnium compounds
Infrared radiation
Interfaces (materials)
Ion beam assisted deposition
Light reflection
Microelectronics
MOS devices
Physical vapor deposition
Silica
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Summary:The interface between HfO sub(2) and SiO sub(2) in electron beam evaporated coatings were analyzed using multiple infrared reflection (MIR) technique and X-ray photoelectron spectroscopy. The coatings were deposited on germanium substrates using ion beam sputtering and electron beam evaporation techniques. Results indicated an appearence of peak representative of a hafnium silicate in the spectrum at 1004 and 888 cm super(-1). These peaks were present in the coatings made by evaporating the same molar quantities of Hf and silica in an oxygen environment.
ISSN:0734-2101