Growth mechanisms of C sub(60)-molecular beam epitaxy on mica

The surface morphology of heteroepitaxial C sub(60)-films on mica has been studied by atomic force microscopy as a function of nominal film thickness at constant substrate temperature. Irregular islands grow in the early stage until they touch each other. Coalescence then forms larger, well-oriented...

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Bibliographic Details
Published in:Surface science 1993-01, Vol.289 (3), p.381-388
Main Authors: Busmann, H-G, Hiss, R, Gaber, H, Hertel, I V
Format: Article
Language:English
Subjects:
Crystal orientation
Crystal structure
Mica
Molecular beam epitaxy
Morphology
Substrates
Surfaces
Thermodynamic stability
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Summary:The surface morphology of heteroepitaxial C sub(60)-films on mica has been studied by atomic force microscopy as a function of nominal film thickness at constant substrate temperature. Irregular islands grow in the early stage until they touch each other. Coalescence then forms larger, well-oriented islands of near thermodynamical equilibrium form. The size of the islands does not increase on further deposition; rather new islands are formed. A bare mica surface between the islands shows that growth at this stage continues by a Volmer-Weber mechanism. When complete surface coverage is achieved, a continuous film with a layer-by-layer growth mechanism is observed. The films finally obtained are of single-crystal quality.
ISSN:0039-6028