Investigation of the M/a-Si : H/c-Si structure as a Schottky contact with a diffusion barrier layer

The electrical and photoelectrical characteristics of the a-Si : H/c-Si (p-type) structure are measured. The structure is analysed as a Schottky diode in which the a-Si : H is considered as a diffusion barrier layer. The conventional h.f. C– V theory is simplified and adapted to the analysis, which...

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Bibliographic Details
Published in:Solar energy materials and solar cells 1999, Vol.58 (4), p.387-397
Main Authors: Georgiev, S.S, Toneva, A, Sueva, D
Format: Article
Language:English
Subjects:
a-Si : H/c-Si
Applied sciences
Band structure
Cost effectiveness
Current voltage characteristics
Diffusion in solids
Electric fields
Electronic density of states
Energy
Exact sciences and technology
Interfaces (materials)
I– V, C– V
Natural energy
Photoelectric cells
Photovoltaic conversion
Schottky barrier
Schottky barrier diodes
Solar cells
Solar cells. Photoelectrochemical cells
Solar energy
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Summary:The electrical and photoelectrical characteristics of the a-Si : H/c-Si (p-type) structure are measured. The structure is analysed as a Schottky diode in which the a-Si : H is considered as a diffusion barrier layer. The conventional h.f. C– V theory is simplified and adapted to the analysis, which allows to estimate the initial band bending at the c-Si interface, the built-in electric field in the a-Si : H layer and the differential density of the a-Si : H/c-Si interface states.
ISSN:0927-0248
1879-3398
DOI:10.1016/S0927-0248(99)00013-6