Experimental and theoretical investigations of a new potential barrier due to sharp a-Si/c-Si heterointerfaces buried in the solar cell emitter

Several new concepts to increase the conversion efficiency of solar cells have been presented over the last few years. One possibility is the multi-interface novel device solar cell with a highly doped amorphised substructure inserted in the emitter. This active nanostructure is created by P ion imp...

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Bibliographic Details
Published in:Solar energy materials and solar cells 2002-04, Vol.72 (1), p.613-619, Article 613
Main Authors: Ley, M, Kuznicki, Z.T
Format: Article
Language:English
Subjects:
Applied sciences
Current voltage characteristics
Electronic transport
Energy
Exact sciences and technology
Heat treatment
Ion implantation
Low–high homojunction
Multi-interface solar cell
Nanostructured materials
Natural energy
Photovoltaic conversion
Potential barrier
Solar cells. Photoelectrochemical cells
Solar energy
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Summary:Several new concepts to increase the conversion efficiency of solar cells have been presented over the last few years. One possibility is the multi-interface novel device solar cell with a highly doped amorphised substructure inserted in the emitter. This active nanostructure is created by P ion implantation followed by an adequate thermal treatment necessary to form two sharp a-Si/c-Si heterointerfaces. After an incomplete initial thermal treatment at 500°C, dark current–voltage ( I– V) characteristics were measured after each of several complementary thermal treatments. In this paper, we show that the classical two-diode model has to include a voltage reduction resulting from the two low–high-type interfaces in order to correctly fit the experimental curves.
ISSN:0927-0248
1879-3398
DOI:10.1016/S0927-0248(01)00211-2