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Polycrystalline Si films formed by Al-induced crystallization (AIC) with and without Al oxides at Al/a-Si interface
Al-induced crystallization (AIC) without an Al oxide at the Al/a-Si interface (glass/Al/a-Si) was investigated in comparison with the case of an Al oxide (glass/Al/Al oxide/a-Si). The Si crystallization of Al/a-Si during AIC was much faster than that of Al/Al oxide/a-Si. The annealing of glass/Al/a-...
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| Published in: | Solar energy materials and solar cells 2002-10, Vol.74 (1), p.323-329 |
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| Main Authors: | , , , , |
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| cited_by | cdi_FETCH-LOGICAL-c370t-d139e7141b46c8428facfd98abf44a955fd017a35f4c84d54796c7ddece93943 |
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| cites | cdi_FETCH-LOGICAL-c370t-d139e7141b46c8428facfd98abf44a955fd017a35f4c84d54796c7ddece93943 |
| container_end_page | 329 |
| container_issue | 1 |
| container_start_page | 323 |
| container_title | Solar energy materials and solar cells |
| container_volume | 74 |
| creator | Kim, Hyeongnam Kim, Daewon Lee, Gyuyul Kim, Dongseop Lee, Soo Hong |
| description | Al-induced crystallization (AIC) without an Al oxide at the Al/a-Si interface (glass/Al/a-Si) was investigated in comparison with the case of an Al oxide (glass/Al/Al oxide/a-Si). The Si crystallization of Al/a-Si during AIC was much faster than that of Al/Al oxide/a-Si. The annealing of glass/Al/a-Si led to poly-Si films with small Si grains compared to that of glass/Al/Al oxide/a-Si. It is difficult to observe the influence of the crystallization temperatures (400–500°C) on the crystallization of glass/Al/a-Si. With annealing of glass/Al/a-Si at 300°C, the crystallization of a-Si occurred not only in the original Al layer but also in the original a-Si layer. With lowering crystallization temperature of glass/Al/Al oxide/a-Si, it is observed that poly-Si films become oriented preferentially in the (1
0
0) direction normal to the surface and had larger grains. These preferentially (1
0
0) oriented Si thin films can act as good seed layers for the growth of the active layers by liquid phase epitaxy. |
| doi_str_mv | 10.1016/S0927-0248(02)00091-0 |
| format | article |
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0) oriented Si thin films can act as good seed layers for the growth of the active layers by liquid phase epitaxy.</description><identifier>ISSN: 0927-0248</identifier><identifier>EISSN: 1879-3398</identifier><identifier>DOI: 10.1016/S0927-0248(02)00091-0</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Al-induced crystallization (AIC) ; Alumina ; Annealing ; Back surface field (BSF) ; Crystal orientation ; Crystallization ; Electric conductivity of solids ; Grain size and shape ; Interfaces (materials) ; Interfacial Al oxide ; Liquid phase epitaxy ; Polycrystalline materials ; Polysilicon ; Seed layer</subject><ispartof>Solar energy materials and solar cells, 2002-10, Vol.74 (1), p.323-329</ispartof><rights>2002 Elsevier Science B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c370t-d139e7141b46c8428facfd98abf44a955fd017a35f4c84d54796c7ddece93943</citedby><cites>FETCH-LOGICAL-c370t-d139e7141b46c8428facfd98abf44a955fd017a35f4c84d54796c7ddece93943</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Kim, Hyeongnam</creatorcontrib><creatorcontrib>Kim, Daewon</creatorcontrib><creatorcontrib>Lee, Gyuyul</creatorcontrib><creatorcontrib>Kim, Dongseop</creatorcontrib><creatorcontrib>Lee, Soo Hong</creatorcontrib><title>Polycrystalline Si films formed by Al-induced crystallization (AIC) with and without Al oxides at Al/a-Si interface</title><title>Solar energy materials and solar cells</title><description>Al-induced crystallization (AIC) without an Al oxide at the Al/a-Si interface (glass/Al/a-Si) was investigated in comparison with the case of an Al oxide (glass/Al/Al oxide/a-Si). The Si crystallization of Al/a-Si during AIC was much faster than that of Al/Al oxide/a-Si. The annealing of glass/Al/a-Si led to poly-Si films with small Si grains compared to that of glass/Al/Al oxide/a-Si. It is difficult to observe the influence of the crystallization temperatures (400–500°C) on the crystallization of glass/Al/a-Si. With annealing of glass/Al/a-Si at 300°C, the crystallization of a-Si occurred not only in the original Al layer but also in the original a-Si layer. With lowering crystallization temperature of glass/Al/Al oxide/a-Si, it is observed that poly-Si films become oriented preferentially in the (1
0
0) direction normal to the surface and had larger grains. These preferentially (1
0
0) oriented Si thin films can act as good seed layers for the growth of the active layers by liquid phase epitaxy.</description><subject>Al-induced crystallization (AIC)</subject><subject>Alumina</subject><subject>Annealing</subject><subject>Back surface field (BSF)</subject><subject>Crystal orientation</subject><subject>Crystallization</subject><subject>Electric conductivity of solids</subject><subject>Grain size and shape</subject><subject>Interfaces (materials)</subject><subject>Interfacial Al oxide</subject><subject>Liquid phase epitaxy</subject><subject>Polycrystalline materials</subject><subject>Polysilicon</subject><subject>Seed layer</subject><issn>0927-0248</issn><issn>1879-3398</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNqFkU9LAzEQxYMoWKsfQchJ28PaZDe72ZykFP8UBIX2HtJkgpHtpiZbtX5601Z61Mtkhvzeg5mH0CUlN5TQajQjIucZyVk9IPmQECJoRo5Qj9ZcZEUh6mPUOyCn6CzGtwTlVcF6KL74ZqPDJnaqaVwLeOawdc0yYuvDEgxebPC4yVxr1jpNB_Jbdc63eDCeTob403WvWLVm1_h1lxTYfzkDEavtMFJZsnVtB8EqDefoxKomwsXv20fz-7v55DF7en6YTsZPmS446TJDCwGcMrpgla5ZXietNaJWC8uYEmVpDaFcFaVl6duUjItKc2NAgygEK_roem-7Cv59DbGTSxc1NI1qwa-j5KwitKYkT-TVn2TOq5KwnCaw3IM6-BgDWLkKbqnCRlIit1nIXRZye-hU5C4LSZLudq-DtO6HgyCjdtCmi7oAupPGu38cfgA4S5D8</recordid><startdate>20021001</startdate><enddate>20021001</enddate><creator>Kim, Hyeongnam</creator><creator>Kim, Daewon</creator><creator>Lee, Gyuyul</creator><creator>Kim, Dongseop</creator><creator>Lee, Soo Hong</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7TC</scope></search><sort><creationdate>20021001</creationdate><title>Polycrystalline Si films formed by Al-induced crystallization (AIC) with and without Al oxides at Al/a-Si interface</title><author>Kim, Hyeongnam ; Kim, Daewon ; Lee, Gyuyul ; Kim, Dongseop ; Lee, Soo Hong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c370t-d139e7141b46c8428facfd98abf44a955fd017a35f4c84d54796c7ddece93943</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Al-induced crystallization (AIC)</topic><topic>Alumina</topic><topic>Annealing</topic><topic>Back surface field (BSF)</topic><topic>Crystal orientation</topic><topic>Crystallization</topic><topic>Electric conductivity of solids</topic><topic>Grain size and shape</topic><topic>Interfaces (materials)</topic><topic>Interfacial Al oxide</topic><topic>Liquid phase epitaxy</topic><topic>Polycrystalline materials</topic><topic>Polysilicon</topic><topic>Seed layer</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Hyeongnam</creatorcontrib><creatorcontrib>Kim, Daewon</creatorcontrib><creatorcontrib>Lee, Gyuyul</creatorcontrib><creatorcontrib>Kim, Dongseop</creatorcontrib><creatorcontrib>Lee, Soo Hong</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Mechanical Engineering Abstracts</collection><jtitle>Solar energy materials and solar cells</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Hyeongnam</au><au>Kim, Daewon</au><au>Lee, Gyuyul</au><au>Kim, Dongseop</au><au>Lee, Soo Hong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Polycrystalline Si films formed by Al-induced crystallization (AIC) with and without Al oxides at Al/a-Si interface</atitle><jtitle>Solar energy materials and solar cells</jtitle><date>2002-10-01</date><risdate>2002</risdate><volume>74</volume><issue>1</issue><spage>323</spage><epage>329</epage><pages>323-329</pages><issn>0927-0248</issn><eissn>1879-3398</eissn><abstract>Al-induced crystallization (AIC) without an Al oxide at the Al/a-Si interface (glass/Al/a-Si) was investigated in comparison with the case of an Al oxide (glass/Al/Al oxide/a-Si). The Si crystallization of Al/a-Si during AIC was much faster than that of Al/Al oxide/a-Si. The annealing of glass/Al/a-Si led to poly-Si films with small Si grains compared to that of glass/Al/Al oxide/a-Si. It is difficult to observe the influence of the crystallization temperatures (400–500°C) on the crystallization of glass/Al/a-Si. With annealing of glass/Al/a-Si at 300°C, the crystallization of a-Si occurred not only in the original Al layer but also in the original a-Si layer. With lowering crystallization temperature of glass/Al/Al oxide/a-Si, it is observed that poly-Si films become oriented preferentially in the (1
0
0) direction normal to the surface and had larger grains. These preferentially (1
0
0) oriented Si thin films can act as good seed layers for the growth of the active layers by liquid phase epitaxy.</abstract><pub>Elsevier B.V</pub><doi>10.1016/S0927-0248(02)00091-0</doi><tpages>7</tpages></addata></record> |
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| identifier | ISSN: 0927-0248 |
| ispartof | Solar energy materials and solar cells, 2002-10, Vol.74 (1), p.323-329 |
| issn | 0927-0248 1879-3398 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_746018102 |
| source | ScienceDirect Freedom Collection |
| subjects | Al-induced crystallization (AIC) Alumina Annealing Back surface field (BSF) Crystal orientation Crystallization Electric conductivity of solids Grain size and shape Interfaces (materials) Interfacial Al oxide Liquid phase epitaxy Polycrystalline materials Polysilicon Seed layer |
| title | Polycrystalline Si films formed by Al-induced crystallization (AIC) with and without Al oxides at Al/a-Si interface |
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