Growth of GaNAs by molecular beam expitaxy using a N sub(2)/Ar rf plasma

High quality GaNAs films were grown using a high efficiency nitrogen plasma source and inert gas mixing to control the amount of active nitrogen. X-ray diffraction revealed the good crystalline quality and sharp interfaces of the resulting films. Dynamical x-ray simulations showed that the films con...

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2000-03, Vol.18 (2), p.461-464
Main Authors: Gotthold, David W, Govindaraju, Sridhar, Mattord, Terry, Holmes, Archie LJr, Streetman, Ben G
Format: Article
Language:English
Subjects:
Argon
Composition
Film growth
Mixtures
Molecular beam epitaxy
Photoluminescence
Plasma sources
Reflection high energy electron diffraction
X ray diffraction analysis
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Summary:High quality GaNAs films were grown using a high efficiency nitrogen plasma source and inert gas mixing to control the amount of active nitrogen. X-ray diffraction revealed the good crystalline quality and sharp interfaces of the resulting films. Dynamical x-ray simulations showed that the films contain up to 2.6% nitrogen.
ISSN:0734-2101