Fe and Ti implants in In sub(0.52)Al sub(0.48)As

Single (200 keV) and multiple energy Fe implants in n-type and Ti implants in p-type material were performed in In sub(0.52)Al sub(0.48)As at both room temperature and 200 degree C. For the Fe implants, the secondary ion mass spectrometry profiles showed a severe out-diffusion for all rapid thermal...

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Bibliographic Details
Published in:Journal of electronic materials 1993-01, Vol.22 (9), p.1153-1157
Main Authors: Martin, Jaime M, Nadella, Ravi K, Rao, Mulpuri V, Simons, David S, Chi, Peter H, Caneau, C
Format: Article
Language:English
Subjects:
Annealing
Backscattering
Diffusion
Electric conductivity
Ion implantation
Iron
Spectrometry
Thermal effects
Titanium
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Summary:Single (200 keV) and multiple energy Fe implants in n-type and Ti implants in p-type material were performed in In sub(0.52)Al sub(0.48)As at both room temperature and 200 degree C. For the Fe implants, the secondary ion mass spectrometry profiles showed a severe out-diffusion for all rapid thermal annealing schemes used, independent of the implantation temperature. The Fe implant peaks observed after annealing, at 0.8Rp, Rp+ Delta Rp and 2Rp (where Rp and Delta Rp are range and straggle, respectively) depth locations in other In-based compounds like InP and InGaAs were not observed here. On the contrary, Ti implants showed only a slight in- and out-diffusion for both room temperature and 200 degree C implants as in the case of InP and InGaAs. The Rutherford backscattering measurements on the annealed samples implanted at 200 degree C showed a crystal quality similar to that of the virgin material. The resistivity of all the samples after annealing was higher than 10 super(6) Omega -cm.
ISSN:0361-5235