Deposition of diamond and boron nitride films by plasma chemical vapour deposition

The deposition problems of diamond and cubic boron nitride (c-BN) by chemical vapour deposition techniques are reviewed, with major emphasis on the nucleation and reaction mechanisms. A discussion is made of the main deposition parameters ( i.e. gas mixture, substrate conditioning, plasma discharges...

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Bibliographic Details
Published in:Surface & coatings technology 1995, Vol.70 (2), p.163-174
Main Authors: Albella, J.M., Gomez-Aleixandre, C., Sanchez-Garrido, O., Vazquez, L., Martinez-Duart, J.M.
Format: Article
Language:English
Subjects:
Characterization
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Cubic boron nitride
Diamonds
Exact sciences and technology
Film preparation
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Nucleation
Physics
Plasma applications
Protective coatings
Reaction kinetics
Thermal conductivity
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Summary:The deposition problems of diamond and cubic boron nitride (c-BN) by chemical vapour deposition techniques are reviewed, with major emphasis on the nucleation and reaction mechanisms. A discussion is made of the main deposition parameters ( i.e. gas mixture, substrate conditioning, plasma discharges etc.) which favour the formation of the cubic phase. Most of the work is devoted to diamond owing to the large progress attained in this material. In fact, the use of diamond as a hard protective coating is now on a commercial scale. By contrast, the preparation of c-BN layers with good characteristics still needs of further research.
ISSN:0257-8972
1879-3347
DOI:10.1016/0257-8972(94)02272-R