Hole spin relaxation in n-modulation doped quantum wells

The hole spin relaxation in n-modulation doped quantum wells has been investigated as a function of the laser excitation energy and excitation intensity. We demonstrate for the first time that the heavy hole spin flip time is a very strong decreasing function of these two parameters. We present a si...

Full description

Saved in:
Bibliographic Details
Published in:Solid state communications 1995, Vol.93 (1), p.57-60
Main Authors: Baylac, B., Amand, T., Marie, X., Dareys, B., Brousseau, M., Bacquet, G., Thierry-Mieg, V.
Format: Article
Language:English
Subjects:
Charge carriers
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron energy levels
Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Laser applications
Light modulation
Optical pumping
Physics
quantum wells Semiconductors spin dynamics
Relaxation processes
Semiconductor doping
Thermal effects
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The hole spin relaxation in n-modulation doped quantum wells has been investigated as a function of the laser excitation energy and excitation intensity. We demonstrate for the first time that the heavy hole spin flip time is a very strong decreasing function of these two parameters. We present a simple interpretation which assigns these dependences to the carriers temperature variation.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(94)00721-7