Photoelectrochemical properties of n-GaAs/ITO electrodes produced by d.c. sputtering

Coating of n-GaAs with transparent conductive films, such as ITO (indium tin oxide), should protect this material against photodecomposition. n-GaAs/ITO samples were produced by reactive dc sputtering using pure oxygen as the reactive sputtering gas. The electrochemical and photoelectrochemical prop...

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Bibliographic Details
Published in:Solar energy materials and solar cells 1997, Vol.45 (1), p.97-103
Main Authors: Kraft, A., Rottmann, M., Heckner, K.-H.
Format: Article
Language:English
Subjects:
Corrosion protection
Cyclic voltammetry
Electrochemical corrosion
ITO
n-GaAs
Optical properties
Photocorrosion
Photoelectrochemistry
Protective coatings
Semiconducting gallium arsenide
Semiconducting indium compounds
Sputter deposition
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Summary:Coating of n-GaAs with transparent conductive films, such as ITO (indium tin oxide), should protect this material against photodecomposition. n-GaAs/ITO samples were produced by reactive dc sputtering using pure oxygen as the reactive sputtering gas. The electrochemical and photoelectrochemical properties of these devices were investigated in different aqueous electrolytes. The cyclic voltammograms of n-GaAs/TTO devices show increasing photocurrent with increasing scan number. This general behaviour can be explained by a corrosion of the ITO film as well as of the n-GaAs substrate. Thus, the produced samples show only low time stability for use as photoelectrodes. An explanation for this behaviour is given.
ISSN:0927-0248
1879-3398
DOI:10.1016/S0927-0248(96)00071-2