Silicon fusion bond interfaces resilient to wet anisotropic etchants

The bond interface in silicon microsystems is sensitive to the subjection to wet anisotropic etchants. Fusion bond interfaces of bonded wafers resilient to potassium hydroxide or tetramethyl ammonium hydroxide etching are obtained using wafers of oxidized silicon bonded to oxidized silicon, where th...

Full description

Saved in:
Bibliographic Details
Published in:Journal of micromechanics and microengineering 2001-07, Vol.11 (4), p.359-363
Main Authors: Köhler, Johan, Strandman, Carola, Vallin, Örjan, Hedlund, Christer, Bäcklund, Ylva
Format: Article
Language:English
Subjects:
Annealing
Bonding
Crystal lattices
Electrical engineering, electronics and photonics
Electronics
Elektronik
Elektroteknik, elektronik och fotonik
Interfaces (materials)
Interfacial energy
Micromachining
Plasma etching
TECHNOLOGY
TEKNIKVETENSKAP
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The bond interface in silicon microsystems is sensitive to the subjection to wet anisotropic etchants. Fusion bond interfaces of bonded wafers resilient to potassium hydroxide or tetramethyl ammonium hydroxide etching are obtained using wafers of oxidized silicon bonded to oxidized silicon, where the bond oxide is removed by trifluoromethane plasma etching. Other investigated bond configurations initiate severe damages during etching.
ISSN:0960-1317
1361-6439
1361-6439
DOI:10.1088/0960-1317/11/4/313