Studies on vacuum deposited p-ZnTe/n-ZnSe heterojunction diodes

p-ZnTe/n-ZnSe heterojunction diodes were prepared by vacuum deposition and a detailed electrical characterization of the heterojunction was performed. The I– V and C– V characteristics of the heterojunction diodes were studied to determine the conduction mechanism, barrier height, space charge densi...

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Bibliographic Details
Published in:Solid-state electronics 2010-08, Vol.54 (8), p.787-790
Main Authors: Rao, Gowrish K., Bangera, Kasturi V., Shivakumar, G.K.
Format: Article
Language:English
Subjects:
Applied sciences
Band diagram
Band theory
Compound structure devices
Cross-disciplinary physics: materials science
rheology
C– V characterization
Density
Depletion
Deposition
Diodes
Electronics
Exact sciences and technology
Heterojunctions
I– V characterization
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
p-ZnTe/n-ZnSe heterojunction
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Vacuum deposition
Volt-ampere characteristics
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Summary:p-ZnTe/n-ZnSe heterojunction diodes were prepared by vacuum deposition and a detailed electrical characterization of the heterojunction was performed. The I– V and C– V characteristics of the heterojunction diodes were studied to determine the conduction mechanism, barrier height, space charge density and thickness of the depletion region in the heterojunction. The bandgap and activation energies of n-ZnSe and p-ZnTe were also determined and a theoretical band diagram of p-ZnTe/n-ZnSe heterojunction was drawn based on Anderson’s model.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2010.03.013