Impact of the gas flow ratio on the physical properties of GaN grown by vertical flow metalorganic chemical vapour deposition

We studied the effect of gas flow ratio of the H 2 carrier gas to the NH 3 precursor on the physical and crystal properties of GaN. GaN was grown by vertical reactor metalorganic chemical vapour deposition (MOCVD) on a low-temperature-deposited GaN buffer layer. A (0 0 0 1) sapphire substrate was us...

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Bibliographic Details
Published in:Journal of crystal growth 2010-07, Vol.312 (15), p.2239-2242
Main Authors: Yuan, Tzu-Tao, Kuei, Ping-Yu, Hsieh, Li-Zen, Li, Ta-Ching, Lin, Wen-Jen
Format: Article
Language:English
Subjects:
A1. Background electron concentration
A1. Carrier gas
A3. MOCVD
B2. GaN
Carbon
Chemical vapor deposition
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Crystal growth
Crystals
Exact sciences and technology
Gallium nitrides
Gas flow
Impurities
Magnesium
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Other materials
Physics
Specific materials
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Summary:We studied the effect of gas flow ratio of the H 2 carrier gas to the NH 3 precursor on the physical and crystal properties of GaN. GaN was grown by vertical reactor metalorganic chemical vapour deposition (MOCVD) on a low-temperature-deposited GaN buffer layer. A (0 0 0 1) sapphire substrate was used. The impact of the gas flow ratio as it was varied from 0.25 to 1 was investigated and discussed. With increase in flow ratio, the concentrations of magnesium and carbon impurities in GaN increased. The flow ratio of 0.5 is the optimum value to minimise the background electron concentration and to maintain crystal quality. The decrease in the background electron concentration is due to the compensation mechanism of acceptor-like magnesium and carbon impurities.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2010.04.039