Extraction of Effective Oxide Thickness for SOI FINFETs With High- \kappa/Metal Gates Using the Body Effect

A methodology based on the transistor body effect is used to monitor inversion oxide thicknesses (T inv's ) in high-κ/metal-gate undoped ultrathin-body short-channel SOI FINFETs. The extracted T inv's are benchmarked to independent capacitance-voltage (C-V) measurements. For the first time...

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Bibliographic Details
Published in:IEEE electron device letters 2010-07, Vol.31 (7), p.650-652
Main Authors: Paul, Sujata, Yeh, Frank, Maitra, Kingsuk, Chung-Hsun Lin, Kerber, Andreas, Kulkarni, Pranita, Jagannathan, Hemanth, Basker, Veeraraghavan S, Miller, Robert J, Huiming Bu
Format: Article
Language:English
Subjects:
Automatic testing
Benchmarking
Capacitance measurement
Centroids
Charge
CMOS technology
Current measurement
Devices
Equivalent circuits
FinFETs
Fully depleted SOI (FDSOI)
inversion oxide thickness
Inversions
Monitoring
Monitors
Oxides
Parasitic capacitance
Simulation
Thickness measurement
ultrathin body
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Summary:A methodology based on the transistor body effect is used to monitor inversion oxide thicknesses (T inv's ) in high-κ/metal-gate undoped ultrathin-body short-channel SOI FINFETs. The extracted T inv's are benchmarked to independent capacitance-voltage (C-V) measurements. For the first time, device simulation is introduced to understand the fundamental difference in T inv values extracted using the two techniques, which is driven by the inversion charge centroid at different bias conditions.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2049634