Wing tilt investigations on GaN epilayer grown on maskless grooved sapphire by MOCVD

GaN epilayer is grown on maskless periodically grooved sapphire by metal organic chemical vapor deposition (MOCVD) in this article. Wing tilt is detected by high resolution X-ray rocking curve. Inhomogeneous deformations between the wing and mesa regions are found by atomic force microscopy (AFM) ch...

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Bibliographic Details
Published in:Journal of materials science 2010-03, Vol.45 (6), p.1503-1506
Main Authors: Yu, Nai Sen, Zhu, Xue Liang, Peng, Ming Zeng, Zhou, Jun Ming
Format: Article
Language:English
Subjects:
Atomic force microscopy
Camber
Characterization and Evaluation of Materials
Chemical vapor deposition
Chemistry and Materials Science
Classical Mechanics
Crystallography and Scattering Methods
Deformation mechanisms
Gallium nitrides
Grooved
Liquors
Materials Science
Mesas
Metalorganic chemical vapor deposition
Organic chemicals
Organic chemistry
Polymer Sciences
Raman spectroscopy
Sapphire
Solid Mechanics
Stress concentration
Stress distribution
Tilt
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Summary:GaN epilayer is grown on maskless periodically grooved sapphire by metal organic chemical vapor deposition (MOCVD) in this article. Wing tilt is detected by high resolution X-ray rocking curve. Inhomogeneous deformations between the wing and mesa regions are found by atomic force microscopy (AFM) characterization. The stress distribution is investigated using finite-element simulations. Inhomogeneous stress distribution in the mesa and wing regions is shown, which is also confirmed by micro-Raman spectroscopy. The results show that the wing tilt in GaN layers grown on maskless periodically grooved sapphire mainly originates from the different deformations for mesa and wing region caused by inhomogeneous stress distribution.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-009-4113-4