A low-power CMOS dual-band RF receiver for IEEE 802.15.4-based sensor node applications

This article presents the design and experimental results of a low‐power dual‐band RF receiver front‐end including a dual‐band low‐noise amplifier (LNA) and a downconversion mixer based on the IEEE 802.15.4 standard for sensor node applications. A dual‐band LNA with two inputs is tuned to two resona...

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Bibliographic Details
Published in:Microwave and optical technology letters 2010-01, Vol.52 (1), p.163-166
Main Authors: Nguyen, Trung-Kien, Kang, Hoyong, Kim, Nae-Soo, Pyo, Cheol-Sig
Format: Article
Language:English
Subjects:
dual-band
Electric potential
low power
Mixers
Noise levels
Radio frequencies
receiver
Receivers
Resonant frequencies
sensor node
Sensors
Voltage
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Summary:This article presents the design and experimental results of a low‐power dual‐band RF receiver front‐end including a dual‐band low‐noise amplifier (LNA) and a downconversion mixer based on the IEEE 802.15.4 standard for sensor node applications. A dual‐band LNA with two inputs is tuned to two resonant frequencies by controlling the voltage on a switched MOS. The implemented RF receiver front‐end achieves a maximum voltage conversion gain of 31 and 21 dB, a noise figure of 6 and 9 dB at the 868/915 MHz and 2.45 GHz bands, respectively. The RF receiver front‐end dissipates a total of 3 mA (including I/Q mixers) under a supply voltage of 1.8 V at both operation bands. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 163–166, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24876
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.24876