Performance improvement of AlGaN/GaN HEMTs using two-step silicon nitride passivation

We report fabrication of AlGaN/GaN high electron mobility transistor (HEMT) with improved DC, high frequency and microwave power performances by employing a two‐step passivation approach. A pretreated AlGaN surface is provided by dry etching n+‐GaN cap layer and RTA annealing ohmic contacts right be...

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Bibliographic Details
Published in:Microwave and optical technology letters 2010-07, Vol.52 (7), p.1614-1619
Main Authors: Lin, Heng-Kuang, Yu, Hsiang-Lin, Huang, F.-H.
Format: Article
Language:English
Subjects:
AlGaN
Aluminum gallium nitrides
Gallium nitrides
GaN
HEMT
High electron mobility transistors
Microwaves
Passivation
Performance enhancement
Semiconductor devices
Silicon nitride
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Summary:We report fabrication of AlGaN/GaN high electron mobility transistor (HEMT) with improved DC, high frequency and microwave power performances by employing a two‐step passivation approach. A pretreated AlGaN surface is provided by dry etching n+‐GaN cap layer and RTA annealing ohmic contacts right before Si3N4 passivant is deposited. No additional process step is associated with the surface preparation for the passivation process. Pulsed I‐V characteristics show that the proposed passivation process successfully eliminates trapping effect at Si3N4 and AlGaN interface and is considered to be the important factor for the performance enhancement. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1614–1619, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25266
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.25266