Differences between nanoscale structural and electrical properties of AZO:N and AZO used in polymer light-emitting diodes

Conducting atomic force microscopy and scanning surface potential microscopy were adopted to investigate the nanoscale surface electrical properties of N‐doped aluminum zinc oxide (AZO:N) films that were prepared by pulsed laser deposition (PLD) at various substrate temperatures. Experimental result...

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Bibliographic Details
Published in:Microscopy research and technique 2010-03, Vol.73 (3), p.202-205
Main Authors: Chen, Sy-Hann, Yu, Chang-Feng
Format: Article
Language:English
Subjects:
Azo
conducting atomic force microscopy
Conduction
Electrical properties
Light-emitting diodes
Microscopy
N-doped aluminum zinc oxide
Nanomaterials
Nanostructure
Optimization
polymer light-emitting diodes
pulsed laser deposition
scanning surface potential microscopy
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Summary:Conducting atomic force microscopy and scanning surface potential microscopy were adopted to investigate the nanoscale surface electrical properties of N‐doped aluminum zinc oxide (AZO:N) films that were prepared by pulsed laser deposition (PLD) at various substrate temperatures. Experimental results demonstrated that when the substrate temperature is 150°C and the N2O background pressure is 150 mTorr, the N‐dopant concentration on the surface is optimal. In addition, the root‐mean‐square roughness value of the film surface, the low contact current (
ISSN:1059-910X
1097-0029
DOI:10.1002/jemt.20775