Fabrication of High Thermal Conductivity β-Si3N4 Ceramics at Relatively Low Temperature Using MgSiN2 as Additives

Silicon nitride ceramics with MgSiN2 as additives were sintered by hot pressing at 1600° ~ 1750 °C for 1-12 h under uniaxial pressure of 20 MPa. The specimens were characterized by x-ray diffraction, scanning electron microscopy, transmission electron microscopy and photothermal deflection spectrosc...

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Published in:Key engineering materials 2010-01, Vol.434-435, p.783-786
Main Authors: Liang, Zhen Hua, Peng, Gui Hua, Li, Wen Lan, Lu, Feng Qi, Liu, Qian
Format: Article
Language:English
Subjects:
Ceramics
Diffraction
Dwell time
Heat transfer
Hot pressing
Photothermal deflection spectroscopy
Scanning electron microscopy
Silicon nitride
Sintering
Thermal conductivity
X-rays
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description Silicon nitride ceramics with MgSiN2 as additives were sintered by hot pressing at 1600° ~ 1750 °C for 1-12 h under uniaxial pressure of 20 MPa. The specimens were characterized by x-ray diffraction, scanning electron microscopy, transmission electron microscopy and photothermal deflection spectroscopy. After sintered at 1750°C for 1 h, the thermal conductivity of the material was 90 W·m-1·K-1. The thermal conductivity could remarkably increase to 120 W·m-1·K-1 by prolonging the dwell time from 1 h to 12 h. The present work demonstrated that MgSiN2 additives were effective to improve the thermal conductivity of β-Si3N4 ceramic.
doi_str_mv 10.4028/www.scientific.net/KEM.434-435.783
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subjects Ceramics
Diffraction
Dwell time
Heat transfer
Hot pressing
Photothermal deflection spectroscopy
Scanning electron microscopy
Silicon nitride
Sintering
Thermal conductivity
X-rays
title Fabrication of High Thermal Conductivity β-Si3N4 Ceramics at Relatively Low Temperature Using MgSiN2 as Additives
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