Horizontally aligned single-walled carbon nanotubes can bridge wide trenches and climb high steps

The direct growth of horizontally aligned single-walled carbon nanotubes (HA-SWNTs) on the two basic structures of future SWNT-based nanodevices, i.e., trenches and steps, were demonstrated. The HA-SWNTs were found to be able to bridge trenches of varying widths (up to 1000 μm across) and to climb s...

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Bibliographic Details
Published in:Chemical engineering journal (Lausanne, Switzerland : 1996) Switzerland : 1996), 2010-03, Vol.157 (2), p.590-597
Main Authors: Rao, Fubo, Zhou, Yuxiu, Li, Tie, Wang, Yuelin
Format: Article
Language:English
Subjects:
Alignment
Applied sciences
Bridges (structures)
Chemical engineering
Climb
Exact sciences and technology
Growth mechanism
Horizontally aligned
Nanocomposites
Nanomaterials
Nanostructure
Single wall carbon nanotubes
Single-walled carbon nanotube
Step
Trench
Trenches
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Summary:The direct growth of horizontally aligned single-walled carbon nanotubes (HA-SWNTs) on the two basic structures of future SWNT-based nanodevices, i.e., trenches and steps, were demonstrated. The HA-SWNTs were found to be able to bridge trenches of varying widths (up to 1000 μm across) and to climb steps of varying heights (up to ∼1500 μm high). Observations of HA-SWNTs with periodical “beeline-curve-beeline” morphologies and HA-SWNTs which grew along step walls when climbing steps indicate that the popular “tip-floating” growth mechanism for HA-SWNTs should be modified because it is not always suitable for our HA-SWNTs. The consequence of HA-SWNTs being able to bridge wide trenches and to climb high steps suggests a promising way to fabricate nanodevices by directly integrating HA-SWNTs into three-dimensional device structures.
ISSN:1385-8947
1873-3212
DOI:10.1016/j.cej.2010.01.015