Electron beam lithography using plasma polymerized hexane as resist

We present electron beam lithography using thin layers of plasma polymerized hexane as resist, as an alternative for conventional spincoated resists. Hexane is chosen due to the possible bioapplications, as well as the relatively simple polymerization chemistry. Successful patterning of micro- and n...

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Bibliographic Details
Published in:Microelectronic engineering 2010-05, Vol.87 (5), p.1112-1114
Main Authors: Pedersen, R.H., Hamzah, M., Thoms, S., Roach, P., Alexander, M.R., Gadegaard, N.
Format: Article
Language:English
Subjects:
Applied sciences
Cross-disciplinary physics: materials science
rheology
Electron beam lithography
Electronics
Exact sciences and technology
Hexane
Hexanes
Materials science
Methods of nanofabrication
Microelectronic fabrication (materials and surfaces technology)
Nanocomposites
Nanolithography
Nanoscale pattern formation
Nanostructure
Physics
Plasma polymerization
Polarity
Polymerization
Polymethyl methacrylates
Resist
Resists
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Surface treatments
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Summary:We present electron beam lithography using thin layers of plasma polymerized hexane as resist, as an alternative for conventional spincoated resists. Hexane is chosen due to the possible bioapplications, as well as the relatively simple polymerization chemistry. Successful patterning of micro- and nanopatterns are achieved with doses of 5000–25000 μC cm −2. Resist polarity is negative and features with a linewidth down to 150 nm are obtained. The patterns have also been used as a mask for a subsequent etch of silicon, with a selectivity comparable to PMMA, and as the base for a lift-off process.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2009.11.043