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Electron beam lithography using plasma polymerized hexane as resist
We present electron beam lithography using thin layers of plasma polymerized hexane as resist, as an alternative for conventional spincoated resists. Hexane is chosen due to the possible bioapplications, as well as the relatively simple polymerization chemistry. Successful patterning of micro- and n...
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| Published in: | Microelectronic engineering 2010-05, Vol.87 (5), p.1112-1114 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c359t-1d858526152c87bf941099ac11561013bd29ebcfa86f344800361fb3b5d9c2f73 |
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| cites | cdi_FETCH-LOGICAL-c359t-1d858526152c87bf941099ac11561013bd29ebcfa86f344800361fb3b5d9c2f73 |
| container_end_page | 1114 |
| container_issue | 5 |
| container_start_page | 1112 |
| container_title | Microelectronic engineering |
| container_volume | 87 |
| creator | Pedersen, R.H. Hamzah, M. Thoms, S. Roach, P. Alexander, M.R. Gadegaard, N. |
| description | We present electron beam lithography using thin layers of plasma polymerized hexane as resist, as an alternative for conventional spincoated resists. Hexane is chosen due to the possible bioapplications, as well as the relatively simple polymerization chemistry. Successful patterning of micro- and nanopatterns are achieved with doses of 5000–25000
μC
cm
−2. Resist polarity is negative and features with a linewidth down to 150
nm are obtained. The patterns have also been used as a mask for a subsequent etch of silicon, with a selectivity comparable to PMMA, and as the base for a lift-off process. |
| doi_str_mv | 10.1016/j.mee.2009.11.043 |
| format | article |
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μC
cm
−2. Resist polarity is negative and features with a linewidth down to 150
nm are obtained. The patterns have also been used as a mask for a subsequent etch of silicon, with a selectivity comparable to PMMA, and as the base for a lift-off process.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2009.11.043</identifier><identifier>CODEN: MIENEF</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Cross-disciplinary physics: materials science; rheology ; Electron beam lithography ; Electronics ; Exact sciences and technology ; Hexane ; Hexanes ; Materials science ; Methods of nanofabrication ; Microelectronic fabrication (materials and surfaces technology) ; Nanocomposites ; Nanolithography ; Nanoscale pattern formation ; Nanostructure ; Physics ; Plasma polymerization ; Polarity ; Polymerization ; Polymethyl methacrylates ; Resist ; Resists ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Surface treatments</subject><ispartof>Microelectronic engineering, 2010-05, Vol.87 (5), p.1112-1114</ispartof><rights>2009 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c359t-1d858526152c87bf941099ac11561013bd29ebcfa86f344800361fb3b5d9c2f73</citedby><cites>FETCH-LOGICAL-c359t-1d858526152c87bf941099ac11561013bd29ebcfa86f344800361fb3b5d9c2f73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,780,784,789,790,23930,23931,25140,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22628760$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Pedersen, R.H.</creatorcontrib><creatorcontrib>Hamzah, M.</creatorcontrib><creatorcontrib>Thoms, S.</creatorcontrib><creatorcontrib>Roach, P.</creatorcontrib><creatorcontrib>Alexander, M.R.</creatorcontrib><creatorcontrib>Gadegaard, N.</creatorcontrib><title>Electron beam lithography using plasma polymerized hexane as resist</title><title>Microelectronic engineering</title><description>We present electron beam lithography using thin layers of plasma polymerized hexane as resist, as an alternative for conventional spincoated resists. Hexane is chosen due to the possible bioapplications, as well as the relatively simple polymerization chemistry. Successful patterning of micro- and nanopatterns are achieved with doses of 5000–25000
μC
cm
−2. Resist polarity is negative and features with a linewidth down to 150
nm are obtained. The patterns have also been used as a mask for a subsequent etch of silicon, with a selectivity comparable to PMMA, and as the base for a lift-off process.</description><subject>Applied sciences</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electron beam lithography</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Hexane</subject><subject>Hexanes</subject><subject>Materials science</subject><subject>Methods of nanofabrication</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Nanocomposites</subject><subject>Nanolithography</subject><subject>Nanoscale pattern formation</subject><subject>Nanostructure</subject><subject>Physics</subject><subject>Plasma polymerization</subject><subject>Polarity</subject><subject>Polymerization</subject><subject>Polymethyl methacrylates</subject><subject>Resist</subject><subject>Resists</subject><subject>Semiconductor electronics. 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Solid state devices</subject><subject>Surface treatments</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kMlOwzAQhi0EEmV5AG65IE4JHjtOHHFCVVmkSlzgbDnOuHWVDTtFlKfHVSuOnEYjff8sHyE3QDOgUNxvsg4xY5RWGUBGc35CZiBLngpRyFMyi0yZVhzKc3IRwobGPqdyRuaLFs3khz6pUXdJ66b1sPJ6XO-SbXD9KhlbHTqdjEO769C7H2ySNX7rHhMdEo_BhemKnFndBrw-1kvy8bR4n7-ky7fn1_njMjVcVFMKjRRSsAIEM7KsbZUDrSptAEQRf-B1wyqsjdWysDzPJaW8AFvzWjSVYbbkl-TuMHf0w-cWw6Q6Fwy2bbxm2AZVCl5ymXMRSTiQxg8heLRq9K7TfqeAqr0vtVHRl9r7UgAq-oqZ2-N0HYxurde9ceEvyFjBZFnQyD0cOIyvfjn0KhiHvcHG-ahSNYP7Z8svSRl_XA</recordid><startdate>20100501</startdate><enddate>20100501</enddate><creator>Pedersen, R.H.</creator><creator>Hamzah, M.</creator><creator>Thoms, S.</creator><creator>Roach, P.</creator><creator>Alexander, M.R.</creator><creator>Gadegaard, N.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20100501</creationdate><title>Electron beam lithography using plasma polymerized hexane as resist</title><author>Pedersen, R.H. ; Hamzah, M. ; Thoms, S. ; Roach, P. ; Alexander, M.R. ; Gadegaard, N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-1d858526152c87bf941099ac11561013bd29ebcfa86f344800361fb3b5d9c2f73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Applied sciences</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electron beam lithography</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Hexane</topic><topic>Hexanes</topic><topic>Materials science</topic><topic>Methods of nanofabrication</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Nanocomposites</topic><topic>Nanolithography</topic><topic>Nanoscale pattern formation</topic><topic>Nanostructure</topic><topic>Physics</topic><topic>Plasma polymerization</topic><topic>Polarity</topic><topic>Polymerization</topic><topic>Polymethyl methacrylates</topic><topic>Resist</topic><topic>Resists</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Surface treatments</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pedersen, R.H.</creatorcontrib><creatorcontrib>Hamzah, M.</creatorcontrib><creatorcontrib>Thoms, S.</creatorcontrib><creatorcontrib>Roach, P.</creatorcontrib><creatorcontrib>Alexander, M.R.</creatorcontrib><creatorcontrib>Gadegaard, N.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pedersen, R.H.</au><au>Hamzah, M.</au><au>Thoms, S.</au><au>Roach, P.</au><au>Alexander, M.R.</au><au>Gadegaard, N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electron beam lithography using plasma polymerized hexane as resist</atitle><jtitle>Microelectronic engineering</jtitle><date>2010-05-01</date><risdate>2010</risdate><volume>87</volume><issue>5</issue><spage>1112</spage><epage>1114</epage><pages>1112-1114</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>We present electron beam lithography using thin layers of plasma polymerized hexane as resist, as an alternative for conventional spincoated resists. Hexane is chosen due to the possible bioapplications, as well as the relatively simple polymerization chemistry. Successful patterning of micro- and nanopatterns are achieved with doses of 5000–25000
μC
cm
−2. Resist polarity is negative and features with a linewidth down to 150
nm are obtained. The patterns have also been used as a mask for a subsequent etch of silicon, with a selectivity comparable to PMMA, and as the base for a lift-off process.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2009.11.043</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0167-9317 |
| ispartof | Microelectronic engineering, 2010-05, Vol.87 (5), p.1112-1114 |
| issn | 0167-9317 1873-5568 |
| language | eng |
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| source | Elsevier |
| subjects | Applied sciences Cross-disciplinary physics: materials science rheology Electron beam lithography Electronics Exact sciences and technology Hexane Hexanes Materials science Methods of nanofabrication Microelectronic fabrication (materials and surfaces technology) Nanocomposites Nanolithography Nanoscale pattern formation Nanostructure Physics Plasma polymerization Polarity Polymerization Polymethyl methacrylates Resist Resists Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Surface treatments |
| title | Electron beam lithography using plasma polymerized hexane as resist |
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