Extraction of the point-spread function in electron-beam lithography using a cross geometry

• Published in: Microelectronic engineering 2010-05, Vol.87 (5), p.1091-1094
• Main Authors: Schefzyk, D., Biesinger, D.E.F., Wharam, D.A.
• Format: Article
• Language: English
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Dosage; Electron beam lithography; Electronics; Exact sciences and technology; Extraction; Materials science; Methods of nanofabrication; Microelectronic fabrication (materials and surfaces technology); Microelectronics; Nanolithography; Physics; Proximity effect; Proximity effects, weak links, tunneling phenomena, and josephson effects, adreev effect, sn and sns junctions; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Separation; Superconductivity
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2009.11.059

For high-quality dose corrections an accurate knowledge of the dose distribution of a single spot, the point-spread function (psf), is required. Usually this information is obtained by writing a set of parallel lines of variable separation and dosage. Subsequent analysis gives information about the value of the psf as a function of the chosen separation. Here we present an alternative method to extract the psf at arbitrary separation and to a high degree of accuracy. This is based upon the exposure of a cross shaped geometry, in which all relevant separations are present.