Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes

Field-effect transistor characteristics of few-layer graphenes prepared by several methods have been investigated in comparison with those of single-layer graphene prepared by the in situ reduction of single-layer graphene oxide. Ambipolar features have been observed with single-layer graphene and n...

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Bibliographic Details
Published in:Solid state communications 2010-04, Vol.150 (15), p.734-738
Main Authors: Late, Dattatray J., Ghosh, Anupama, Subrahmanyam, K.S., Panchakarla, L.S., Krupanidhi, S.B., Rao, C.N.R.
Format: Article
Language:English
Subjects:
A. Field-effect transistor
A. Graphene
Applied sciences
Boron
D. Doping
D. Mobility
Electronics
Exact sciences and technology
Graphene
Graphite
Molecular electronics, nanoelectronics
Oxides
Reduction
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Solid state
Transistors
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Summary:Field-effect transistor characteristics of few-layer graphenes prepared by several methods have been investigated in comparison with those of single-layer graphene prepared by the in situ reduction of single-layer graphene oxide. Ambipolar features have been observed with single-layer graphene and n-type behaviour with all the few-layer graphenes, the best characteristics being found with the graphene possessing 2–3 layers prepared by arc-discharge of graphite in hydrogen. FETs based on boron and nitrogen doped graphene show n-type and p-type behaviour respectively.
ISSN:0038-1098
1879-2766
DOI:10.1016/j.ssc.2010.01.030