Cryogenic operation of FinFETs aiming at analog applications

FinFETs are recognized as promising candidates for the CMOS nanometer era. In this paper the most recent results for cryogenic operation of FinFETs will be demonstrated with special emphasis on analog applications. Threshold voltage, subthreshold slope and carrier mobility will be studied. Also some...

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Bibliographic Details
Published in:Cryogenics (Guildford) 2009-11, Vol.49 (11), p.590-594
Main Authors: Pavanello, M.A., Martino, J.A., Simoen, E., Claeys, C.
Format: Article
Language:English
Subjects:
A. Semiconductors
Applied sciences
Conductance
Cryogenics
D. Cryoelectronics
Degradation
Devices
Doping
Electronics
Energy
Energy. Thermal use of fuels
Exact sciences and technology
Reduction
Refrigerating engineering. Cryogenics. Food conservation
Threshold voltage
Transconductance
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Summary:FinFETs are recognized as promising candidates for the CMOS nanometer era. In this paper the most recent results for cryogenic operation of FinFETs will be demonstrated with special emphasis on analog applications. Threshold voltage, subthreshold slope and carrier mobility will be studied. Also some important figures of merit for analog circuit operation as for readout electronics, such as transconductance, output conductance and intrinsic voltage gain will be covered. It is demonstrated that the threshold voltage of undoped narrow FinFETs is less temperature-dependent than for a planar single-gate device with similar doping concentration. The temperature reduction improves the transconductance over drain current ratio in any operational region. On the other hand, the output conductance is degraded when the temperature is reduced. The combination of these effects shows that the intrinsic gain of a L = 90 nm FinFET is degraded by 2 dB when the temperature reduces from 300 K to 100 K.
ISSN:0011-2275
1879-2235
DOI:10.1016/j.cryogenics.2008.12.012