Tungsten-dual polymetal technology for low resistive gate electrode

• Published in: Solid-state electronics 2010-06, Vol.54 (6), p.650-653
• Main Authors: Kim, Yong Soo, Sung, Min-Gyu, Park, Sung-Ki
• Format: Article
• Language: English
• Subjects: Applied sciences; Chemical vapor deposition; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Diffusion barriers; DRAM; Dual polymetal gate; Dynamic random access memory; Electrodes; Electronics; Exact sciences and technology; Gates; Integrated circuits; Integrated circuits by function (including memories and processors); Low resistivity tungsten; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Microelectronic fabrication (materials and surfaces technology); Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Titanium; Transistors; Tungsten
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2010.03.001

We developed ultra-low resistive tungsten dual polymetal (W/barrier metal/dual poly-Si) gate technology suitable for a high performance and high density dynamic random access memory (DRAM) device by using a Ti-based diffusion barrier and a unique tungsten chemical vapor deposition (CVD) process with a B 2H 6-based nucleation layer. The new low resistive CVD-W deposited on Ti/WN diffusion barrier of dual polymetal gate process not only reveals good oxide reliability comparable to the physical vapor deposition, PVD-W process, but also highly improved transistor performance with signal delay characteristics.