Memory characteristics of Al sub(2)O sub(3)/La sub(2)O sub(3)/Al sub(2)O sub(3) multi-layer films with various blocking and tunnel oxide thicknesses

In order to investigate charge trap characteristics with various thicknesses of blocking and tunnel oxide for application to non-volatile memory devices, we fabricated 5 and 15 nm Al sub(2)O sub(3)/5 nm La sub(2)O sub(3)/5 nm Al sub(2)O sub(3) and 15 nm Al sub(2)O sub(3)/5 nm La sub(2)O sub(3)/5, 7....

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Bibliographic Details
Published in:Materials science in semiconductor processing 2010-02, Vol.13 (1), p.9-12
Main Authors: Kim, Hyo June, Cha, Seung Yong, Choi, Doo Jin
Format: Article
Language:English
Subjects:
Aluminum oxide
Data storage
Memory devices
Multilayers
Oxide coatings
Oxides
Semiconductors
Tunnels (transportation)
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Summary:In order to investigate charge trap characteristics with various thicknesses of blocking and tunnel oxide for application to non-volatile memory devices, we fabricated 5 and 15 nm Al sub(2)O sub(3)/5 nm La sub(2)O sub(3)/5 nm Al sub(2)O sub(3) and 15 nm Al sub(2)O sub(3)/5 nm La sub(2)O sub(3)/5, 7.5, and 10 nm Al sub(2)O sub(3) multi-stack films, respectively. The optimized structure was 15 nm Al sub(2)O sub(3) blocking oxide/5 nm La sub(2)O sub(3) trap layer/5 nm Al sub(2)O sub(3) tunnel oxide film. The maximum memory window of this film of about 1.12 V was observed at 11 V for 10 ms in program mode and at -13 V for 100 ms in erase mode. At these program/erase conditions, the threshold voltage of the 15 nm Al sub(2)O sub(3)/5 nm La sub(2)O sub(3)/5 nm Al sub(2)O sub(3) film did not change for up to about 10 super(4) cycles. Although the value of the memory window in this structure was not large, it is thought that a memory window of 1.12 V is acceptable in the flash memory devices due to a recently improved sense amplifier.
ISSN:1369-8001
DOI:10.1016/j.mssp.2010.01.002