Low power resistive switching memory using Cu metallic filament in Ge sub(0.2)Se sub(0.8) solid-electrolyte

Bipolar resistive switching memory device using Cu metallic filament in Au/Cu/Ge sub(0.2)Se sub(0.8)/W memory device structure has been investigated. This resistive memory device has the suitable threshold voltage of V sub(th) > 0.18 V, good resistance ratio (R sub(High)/R sub(Low)) of 2.6 x 10 s...

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Bibliographic Details
Published in:Microelectronics and reliability 2010-05, Vol.50 (5), p.643-646
Main Authors: Rahaman, S Z, Maikap, S
Format: Article
Language:English
Subjects:
Copper
Data storage
Devices
ELECTRICAL CONDUCTIVITY
ELECTROLYTES
ELECTRONIC PRODUCTS
Endurance
Filaments
Memory devices
Programming
STORAGE
Switching
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Summary:Bipolar resistive switching memory device using Cu metallic filament in Au/Cu/Ge sub(0.2)Se sub(0.8)/W memory device structure has been investigated. This resistive memory device has the suitable threshold voltage of V sub(th) > 0.18 V, good resistance ratio (R sub(High)/R sub(Low)) of 2.6 x 10 super(3), good endurance of >10 super(4) cycles with a programming current of 0.3 mA/0.8 mA, and 5 h of retention time at low compliance current of 10 nA. The low resistance state (R sub(Low)) of the memory device decreases with increasing the compliance current from 1 nA to 500 mu A for different device sizes from 0.2 mu m to 4 mu m. The memory device can work at very low compliance current of 1 nA, which can be applicable for extremely low power-consuming memory devices.
ISSN:0026-2714
DOI:10.1016/j.microrel.2010.01.022