Anomalous Hall effect in disordered multiband metals

We present a microscopic theory of the anomalous Hall effect (AHE) in metallic multiband ferromagnets, which accounts for all scattering-independent contributions, i.e., both the intrinsic and the so-called side jump. For a model of Gaussian disorder, the AHE is expressed solely in terms of the mate...

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Bibliographic Details
Published in:Physical review letters 2010-07, Vol.105 (3), p.036601-036601, Article 036601
Main Authors: Kovalev, Alexey A, Sinova, Jairo, Tserkovnyak, Yaroslav
Format: Article
Language:English
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Summary:We present a microscopic theory of the anomalous Hall effect (AHE) in metallic multiband ferromagnets, which accounts for all scattering-independent contributions, i.e., both the intrinsic and the so-called side jump. For a model of Gaussian disorder, the AHE is expressed solely in terms of the material's electronic band structure. Our theory handles systematically the interband-scattering coherence effects. We demonstrate the method in the 2D Rashba and 3D ferromagnetic (III,Mn)V semiconductor models. Our formalism is directly amenable to ab initio treatments for a wide range of ferromagnetic metals.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.105.036601