Ab initio simulations of homoepitaxial SiC growth

We present first-principle calculations on the initial stages of SiC homoepitaxial growth on the beta-SiC(111)-(sqrt[3]xsqrt[3]) surface. We show that the nonstoichiometric reconstruction plays a relevant role in favoring the attainment of high-quality films. The motivation is twofold: On one hand,...

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Bibliographic Details
Published in:Physical review letters 2003-09, Vol.91 (13), p.136101-136101, Article 136101
Main Authors: Righi, M C, Pignedoli, C A, Di Felice, R, Bertoni, C M, Catellani, A
Format: Article
Language:English
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Summary:We present first-principle calculations on the initial stages of SiC homoepitaxial growth on the beta-SiC(111)-(sqrt[3]xsqrt[3]) surface. We show that the nonstoichiometric reconstruction plays a relevant role in favoring the attainment of high-quality films. The motivation is twofold: On one hand, we find that the reconstruction controls the kinetics of adatom incorporation; on the other hand, we observe that the energy gain upon surface stability can induce the reorganization of the deposited material into a crystalline structure, thus revealing that a surface-driven mechanism is able to stabilize defect-free layer deposition on Si-rich surfaces.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.91.136101